Power Cycling on Lateral GaN and β-Ga<sub>2</sub>O<sub>3</sub> Transistors

The load cycling capability of novel power semiconductors is an important aspect when estimating their lifetime in field service. Power Cycling Test (PCT) the standard test to evaluate a semiconductor device under thermo-mechanical stress. PCTs are typically performed at temperature swings (ΔT) much higher than common operating conditions, obtain results within reasonable time. In this work, PCT gallium nitride (GaN) and oxide (Ga2O3) lateral transistors investigated. GaN devices were tested two groups with different ΔT. was monitored using sensitive electrical parameters (TSEPs) accuracy both methods evaluated by comparing temperature, infrared (IR) camera. For Ga2O3 devices, no data on potential TSEP exists so far, thus, typical for silicon (Si), carbide (SiC) investigated applicability devices. While conducted also IR comparison camera showed, that matched either hottest spot chip (V DS method), or average GS method). suitable could be obtained only used measurement. It revealed very uneven current distribution chip. Furthermore, exhibit outstanding failure after completing several millions cycles. Considering difference Young’s Modulus Si, Ga2O3, performance should inferior Thus, types, transistors, showed expected.